Simulation of TF-μSR histograms in germanium in the presence of cyclic charge state transitions of muonium

13th International Conference on Muon Spin Rotation, Relaxation and Resonance

Prokscha, Thomas^1

Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, Villigen PSI

CH-5232, Switzerland^1

关键词: Forward reactions;    Germanium wafer;    Ionization rates;    Quantitative determinations;    Relaxation rates;    Reverse reactions;    Surface layers;    Thermal activation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/551/1/012049/pdf
DOI  :  10.1088/1742-6596/551/1/012049

来源: IOP

【 摘 要 】

It has recently been shown that at T -T + h+Mu0T. For a quantitative determination of the photo-induced hole carrier concentration we use a Monte-Carlo simulation to generate muon decay histograms for different hole capture rates (forward reaction), and ionization rates (reverse reaction due to thermal activation) [2]. The hole carrier concentration is determined by comparing simulated and experimental relaxation rates. These results have been used to estimate the photo-induced hole concentration in low-energy μSR experiments [1].