Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution

Electron Microscopy and Analysis Group Conference 2013

Parreira, Pedro^1 ; McVitie, Stephen^1 ; Maclaren, D.A.^1

SUPA, School of Physics and Astronomy, University of Glasgow, G12 8QQ Glasgow, United Kingdom^1

关键词: Conductive filaments;    Device fabrications;    Driving forces;    Filament formation;    Physical mechanism;    Resistive switching;    Resistive switching devices;    Switching process;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/522/1/012045/pdf
DOI  :  10.1088/1742-6596/522/1/012045

来源: IOP

【 摘 要 】

Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications. Multiple physical mechanisms underpin the non-volatile switching process and are ultimately believed to give rise to the formation and dissolution of a discrete conductive filament within the active layer. However, a detailed nanoscopic analysis that fully explains all the contributory events remains to be presented. Here, we present aspects of the switching events that are correlated back to tunable details of the device fabrication process. Transmission electron microscopy and atomically resolved electron energy loss spectroscopy (EELS) studies of electrically stressed devices will then be presented, with a view to understanding the driving forces behind filament formation and dissolution.