Improved Magnetism in Mn-doped ZnO Thin Films by Inserting ZnO Layer

7th Annual International Conference on Materials Science and Engineering

Yang, Huifang^1 ; Li, Zhenhua^1 ; Tang, Lingzhi^1 ; Li, Guihua^1 ; Sun, Qiang^1 ; Ren, Shuxia^1

School of Material Science and Engineering, Shijiazhuang TieDao University, Shijiazhuang

050043, China^1

关键词: Conductive filaments;    Doped ZnO;    Magnetic poles;    Magnetic variation;    Mn-doped ZnO thin films;    Resistive switching;    ZnO buffer layer;    ZnO layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/562/1/012075/pdf
DOI  :  10.1088/1757-899X/562/1/012075

来源: IOP

【 摘 要 】

Compared to Ti/Mn doped ZnO/Pt (Ti/MZO/Pt) device, the Ti/MZO/ZnO/Pt device exhibits more excellent resistive switching (RS) performances and larger magnetic variation behaviors. The RS behavior is attributed to formation and rupture of oxygen vacancy (Vo) based conductive filaments (CFs), and magnetic variation was demonstrated by bound magnetic pole (BMP) model. Here ZnO buffer layer contribute to improve the RS and magnetism.