Graphoepitaxial high-Tc SQUIDs

11th European Conference on Applied Superconductivity

Faley, M.I.^1 ; Meertens, D.^1 ; Poppe, U.^1 ; Dunin-Borkowski, R.E.^1

Peter Grünberg Institute (PGI-5: Microstructure Research), Forschungszentrum Jülich GmbH, Jülich

D-52425, Germany^1

关键词: Blocking layers;    Double buffers;    Fabrication process;    Flux transformers;    Inductively-coupled;    Micro-structural properties;    Quantum interferometer;    Step-edge junctions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/507/4/042009/pdf
DOI  :  10.1088/1742-6596/507/4/042009

来源: IOP

【 摘 要 】

The fabrication process and physical properties of graphoepitaxially engineered high-Tcdirect current superconducting quantum interferometer devices (DC SQUIDs) are studied. Double buffer layers, each comprising a graphoepitaxial seed layer of YBa2Cu3O7-xand an epitaxial blocking layer of SrTiO3, were deposited over textured step edges on (001) surfaces of MgO substrates. Scanning electron microscopy and high-resolution transmission electron microscopy were used to investigate the microstructural properties of DC SQUIDs with graphoepitaxial Josephson junctions. Both direct coupled and inductively coupled high-TcDC SQUIDs with graphoepitaxial step edge junctions and flux transformers were studied.