The dependence of resistively measured Bc2 and Birr on BaZrO3 concentration in YBa2Cu3O6+x thin films

11th European Conference on Applied Superconductivity

Malmivirta, M.^1 ; Palonen, H.^1,2 ; Huhtinen, H.^1 ; Paturi, P.^1

Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, Turku

FI-20014, Finland^1

National Doctoral Programme in Nanoscience (NGS-NANO), Turku, Finland^2

关键词: Angular dependence;    In-field;    Out-of plane;    Resistive measurements;    Scaling parameter;    YBa2Cu3O6+x;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/507/1/012030/pdf
DOI  :  10.1088/1742-6596/507/1/012030

来源: IOP

【 摘 要 】

The effect of BaZrO3(BZO) concentration on Birrand Bc2in YBa2Cu3O6+x(YBCO) thin films was investigated with resistive measurements. It was found that in field out-of-plane configuration both Birrand Bc2decrease with the highest BZO concentration of 9 wt% whereas the other samples show no significant change. The angular dependence of Birrof the highest BZO concentration sample has a pronounced c-axis peak that is typical for BZO-doped YBCO but the others do not exhibit that clear peak. On the other hand, Bc2obeys the Blatter scaling law and the Blatter scaling parameter γ levels off to 3 - 3.5 above few wt% of BZO.