会议论文详细信息
13th International Workshop on Slow Positron Beam Techniques and Applications
Defect studies of thin ZnO films prepared by pulsed laser deposition
Vlcek, M.^1 ; Cíek, J.^1 ; Procházka, I.^1 ; Novotný, M.^2 ; Bulí, J.^2 ; Lanok, J.^2 ; Anwand, W.^3 ; Brauer, G.^3 ; Mosnier, J.-P.^4
Faculty of Mathematics and Physics, Charles University in Prague, V Holeovikách 2, 180 00 Praha 8, Czech Republic^1
Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Praha, Czech Republic^2
Institut für Strahlenphysik, Forszungszentrum Dresden-Rossendorf, 01314 Dresden, Germany^3
National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9, Ireland^4
关键词: Deposition temperatures;    Diamond substrates;    Different substrates;    Fused silica substrates;    High deposition temperature;    Nanocrystallines;    Single crystal sapphires;    Slow positron implantation spectroscopies;   
Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/505/1/012021/pdf
DOI  :  10.1088/1742-6596/505/1/012021
来源: IOP
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【 摘 要 】

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

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