Silicene on substrates: interaction mechanism and growth behavior

3rd International Meeting on Silicene

Liu, H.^1 ; Gao, J.^1,2 ; Zhao, J.^1,2

Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, China^1

Beijing Computational Science Research Center, Beijing 100084, China^2

关键词: Critical issues;    Growth behavior;    Honeycomb lattices;    Interaction mechanisms;    Metal surfaces;    Micro-electronic devices;    Silicon atoms;    Substrate effects;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/491/1/012007/pdf
DOI  :  10.1088/1742-6596/491/1/012007

来源: IOP

【 摘 要 】

Silicene, a monolayer of silicon atom assembling in a honeycomb lattice, has attracted more and more attention due to its outstanding electronic properties. The recently successful synthesis of silicene on several metal surfaces takes a big step towards the utilization of silicene in the future microelectronic devices. On the roadmap for the applications of silicene, two critical issues have to be addressed: (1) how to improve the quality of silicene; (2) how to preserve the extraordinary electronic properties of silicene. These two problems can be solved by deeply understanding the substrate effect on silicene. In this review, we systematically discuss the substrate effect on the atomic structure and electronic properties of a silicene sheet as well as the growth behavior of silicene on Ag surface, which are important for both fabrication and application of silicene.