Electron-impact ionization for P-like ions forming Si-like ions

28th International Conference on Photonic, Electronic and Atomic Collisions

Kwon, Duck-Hee^1 ; Savin, Daniel Wolf^2

Nuclear Data Center, Korea Atomic Energy Research Institute, Daejeon

305-353, Korea, Republic of^1

Columbia Astrophysics Laboratory, Columbia University, New York

NY

10027, United States^2

关键词: Atomic codes;    Branching ratio;    Distorted waves;    Electron impact-ionization;    Excitation autoionization;    Ionization thresholds;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/488/6/062009/pdf
DOI  :  10.1088/1742-6596/488/6/062009

来源: IOP

【 摘 要 】

We have calculated electron-impact ionization (EII) for initially P-like systems for ions with an even proton number Z from S+to Zn15+. We used the flexible atomic code (FAC) which is based on a distorted-wave (DW) approximation. In our work, 3l → nl (n = 4 - 35) excitation-autoionization (EA) channels near the 3p direct ionization threshold and 2l → nl' (n 3-10) EA channels at the higher energies are included, along with the detailed branching ratios. Our calculated EII cross sections are compared both with previous FAC calculations, which omitted many of these EA channels, and with the available experiments.