The study of damage produced by H-ion and He-ion implantation in Lithium tantalate crystal

28th International Conference on Photonic, Electronic and Atomic Collisions

Pang, L.L.^1 ; Wang, Z.G.^1 ; Yao, C.F.^1 ; Sun, J.R.^1 ; Cui, M.H.^1,2 ; Wei, K.F.^1 ; Shen, T.L.^1 ; Sheng, Y.B.^1 ; Zhu, Y.B.^1 ; Li, Y.F.^1,2 ; Chang, H.L.^1,2 ; Wang, J.^1,2 ; Zhu, H.P.^1,2

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, Gansu

730000, China^1

University of Chinese Academy of Sciences, Beijing

100049, China^2

关键词: Damage level;    He ion implantation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/488/13/132028/pdf
DOI  :  10.1088/1742-6596/488/13/132028

来源: IOP

【 摘 要 】

LiTaO3single crystals were implanted by 100keV H-ion or He-ion. The results indicate that H-ion implantation creates a lower damage level than the He-ion implantation does, but the yield of oxygen vacancy produced by H-ion implantation is far higher than by He-ion implantation.