Frequency dispersion and damping mechanisms of terahertz plasmons in graphene transistor structures

2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies

Satou, Akira^1 ; Ryzhii, V.^1 ; Mitin, Vladimir V.^2 ; Vasko, Fedir T.^2 ; Otsuji, Taiichi^1

Research Institute of Electrical Communication, Tohoku University, Japan^1

Department of Electrical Engineering, University at Buffalo, United States^2

关键词: Carrier scattering;    Damping mechanisms;    Frequency dispersion;    Frequency tunability;    Gate structure;    Modeling for simulations;    Source and drains;    Transistor structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/486/1/012029/pdf
DOI  :  10.1088/1742-6596/486/1/012029

来源: IOP

【 摘 要 】

We develop a numerical model for simulation of plasmons in graphene with grating-gate structures, based on the Boltzmann equation and self-consistent Poisson equation. Using the model, we study the effect of coupling between plasmons in gated and ungated regions on the frequency tunability by the gate voltage and the damping of plasmons due to carrier scattering and due to source and drain contacts.