AlGaN/GaN plasmonic terahertz electronic devices

2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies

Shur, Michael^1

ECSE and PAPA, Rensselaer Polytechnic Institute, Troy, NY 12180, United States^1

关键词: AlGaN/gaN;    Electron sheet density;    Electronics applications;    Materials systems;    Momentum relaxation;    Terahertz electronics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/486/1/012025/pdf
DOI  :  10.1088/1742-6596/486/1/012025

来源: IOP

【 摘 要 】

A very large electron sheet density and a relatively long momentum relaxation time of the two-dimensional electron gas in III-N heterostructures makes this materials system to be very attractive for plasmonic electronics applications.