Self-consistent surface charges and electric field in p-i-n tunneling transit-time diodes based on single- and multiple-layer graphene structures

2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies

Semenenko, V.L.^1 ; Leiman, V.G.^1 ; Arsenin, A.V.^1 ; Mitin, V.^2 ; Ryzhii, M.^3 ; Otsuji, T.^3 ; Ryzhii, V.^4

Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Dolgoprudny, Russia^1

Department of Electrical Engineering, University at Buffalo, Buffalo, United States^2

Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu, Japan^3

Research Institute for Electrical Communication, Tohoku University, Sendai, Japan^4

关键词: Ballistic transports;    Frequency dependent;    Multiple-layer structures;    Reverse bias voltage;    Self consistent charges;    Self consistent electric field;    Self-consistent surface;    Structural parameter;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/486/1/012011/pdf
DOI  :  10.1088/1742-6596/486/1/012011

来源: IOP

【 摘 要 】

We develop a device model for p-i-n tunneling transit-time diodes based on graphene single- and multiple-layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for the features of the interband tunneling generation of electrons and holes and their ballistic transport in the device i-section, as well as the effect of the self-consistent electric field associated with the self-consistent charges of propagating electrons and holes. Using the developed model, we calculate the dc current-voltage characteristics and the ac frequency-dependent admittance as functions of the GTUNNETT structural parameters, in particular, the number of graphene layers.