Giant tunnel magnetoresistance in double quantum well structures under an in-plane magnetic field

20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics

Morozova, E.N.^1 ; Volkov, V.A.^1 ; Portal, J.-C.^2

V.A. Kotelnikov Institute of Radio-engineering and Electronics of RAS, Moscow, Russia^1

IUF-INSA, Toulouse and CNRS-LNCMI, Grenoble, France^2

关键词: Ballistic transports;    Double quantum well structures;    High-temperature regime;    In-plane magnetic fields;    Low-temperature regime;    Temperature range;    Tunnel magnetoresistance;    Zero-bias voltage;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/456/1/012029/pdf
DOI  :  10.1088/1742-6596/456/1/012029

来源: IOP

【 摘 要 】

The vertical Ohmic magnetotransport in the structures with low but wide barrier Al0.1Ga0.9As between two quantum wells GaAs, in temperature range T=3K-45K under in-plane magnetic fields B= 0 - 9 T is investigated. At zero-bias voltage, two mechanisms that determine the transitions well-barrier-well observed. The low-temperature regime (3K - 20K) is corresponded to the tunnel transport. The above-barrier ballistic transport with activation energy 50 meV is realized in high-temperature regime (35K - 45K). Magnetoresistance R(B)/R(0) in the high-temperature regime doesn't depend on T and is increased two times at B=0 - 5 T. At low temperatures R(B)/R(0) is increased 10 times at B=0-5 T and 400 times at B=0 - 9 T. The effect is explained by suppression by in-plane magnetic field of resonant tunneling processes conserving the in-plane momentum.