Dielectrics 2013 | |
Development of PLZT film-on-foil capacitors with high energy density | |
Ma, Beihai^1 ; Narayanan, Manoj^1 ; Liu, Shanshan^1 ; Hu, Zhongqiang^1 ; Balachandran, Uthamalingam^1 | |
Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439, United States^1 | |
关键词: Advanced Electronics; Chemical solution deposition; Dielectric breakdown strength; Dielectric capacitors; High dielectric constants; High energy densities; Lanthanum doped lead zirconate titanate; Wide temperature ranges; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/472/1/012004/pdf DOI : 10.1088/1742-6596/472/1/012004 |
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来源: IOP | |
【 摘 要 】
Ceramic thin films with high dielectric constant and high breakdown strength hold special promise for advanced electronics applications. We deposited lanthanum-doped lead zirconate titanate (PLZT) on base metal foils (film-on-foils) by chemical solution deposition. The PLZT film-on-foils were characterized over a wide temperature range between room temperature and 200°C. For ≈2-μm-thick PLZT films grown on LaNO3-buffered nickel foils at room temperature, we measured a dielectric constant of ≈1300, dielectric loss of ≈0.07, remanent polarization of ≈26 μC/cm2, coercive field of ≈29 kV/cm, leakage current density of ≈9.2 × 10-9A/cm2, and energy density of ≈67 J/cm3. Dielectric breakdown strength was determined to be ≈2.6 × 106V/cm by Weibull analysis. These and other results reported here indicate that electronic devices with film-on-foil capacitors would possess higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies compared with traditional dielectric capacitors.
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