Development of PLZT film-on-foil capacitors with high energy density

Dielectrics 2013

Ma, Beihai^1 ; Narayanan, Manoj^1 ; Liu, Shanshan^1 ; Hu, Zhongqiang^1 ; Balachandran, Uthamalingam^1

Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439, United States^1

关键词: Advanced Electronics;    Chemical solution deposition;    Dielectric breakdown strength;    Dielectric capacitors;    High dielectric constants;    High energy densities;    Lanthanum doped lead zirconate titanate;    Wide temperature ranges;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/472/1/012004/pdf
DOI  :  10.1088/1742-6596/472/1/012004

来源: IOP

【 摘 要 】

Ceramic thin films with high dielectric constant and high breakdown strength hold special promise for advanced electronics applications. We deposited lanthanum-doped lead zirconate titanate (PLZT) on base metal foils (film-on-foils) by chemical solution deposition. The PLZT film-on-foils were characterized over a wide temperature range between room temperature and 200°C. For ≈2-μm-thick PLZT films grown on LaNO3-buffered nickel foils at room temperature, we measured a dielectric constant of ≈1300, dielectric loss of ≈0.07, remanent polarization of ≈26 μC/cm2, coercive field of ≈29 kV/cm, leakage current density of ≈9.2 × 10-9A/cm2, and energy density of ≈67 J/cm3. Dielectric breakdown strength was determined to be ≈2.6 × 106V/cm by Weibull analysis. These and other results reported here indicate that electronic devices with film-on-foil capacitors would possess higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies compared with traditional dielectric capacitors.