Correlation of Microstructure and Transport Properties of Multilayered Graphene Spin Valves on SiO2/Si

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Lari, L.^1,2 ; Hughes, G.^3 ; Muramoto, K.^4 ; Hirohata, A.^5,6 ; Shiraishi, M.^4 ; Lazarov, V.K.^1,2

Department of Physics, University of York, Heslington, YO10 5DD, York, United Kingdom^1

JEOL Nanocentre, University of York, Heslington, YO10 5BR, York, United Kingdom^2

Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom^3

Graduate School of Engineering Science, Osaka University, Osaka, Japan^4

Department of Electronics, University of York, Heslington, YO10 5DD, York, United Kingdom^5

PRESTO, Japan Science and Technology Agency, Kawaguchi, Japan^6

关键词: Aberration-corrected;    Energy dispersive X ray spectroscopy;    Focused ion beam microscopy;    Interfacial structures;    Multi-layered graphene;    Negative bias;    Spin injection;    Spin scattering;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012048/pdf
DOI  :  10.1088/1742-6596/471/1/012048

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Multi-layered graphene based spin valves were deposited on SiO2/Si substrates and the Co ferromagnetic and non-magnetic electrodes were patterned using electron-beam lithography. Aberration-corrected (scanning) transmission electron microscopy imaging and energy dispersive X-ray spectroscopy were employed to study the interfacial structure of the device components from thin cross-sectional lamellae obtained by focused ion beam microscopy. The robustness of the spin injection with a constant spin polarization under positive and negative bias voltage was attributed to the interface smoothness which leads to suppression of spin scattering at the interface between the ferromagnet and the multi-layered graphene.