Delayering of Microelectronic Devices Using an Adjustable Broad-Beam Ion Source

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Robins, A.C.^1 ; Cerchiara, R.R.^1 ; Fischione, P.E.^1 ; Boccabella, M.F.^1 ; Matesa, J.M.^1 ; Marsh, L.M.^1 ; Zhang, Z.^1

E. A. Fischione Instruments, Inc., 9003 Corporate Circle, Export, PA 15632, United States^1

关键词: Complementary methods;    Effective area;    Field of views;    Micro-electronic devices;    Microstructural features;    Removal rate;    Through silicon vias;    Two model systems;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012046/pdf
DOI  :  10.1088/1742-6596/471/1/012046

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Analysis of the integrated circuits of a microelectronic device depends on delayering. Focused ion beam (FIB) or broad ion beam (BIB) milling are effective complementary methods of delayering. FIB provides higher removal rates, but is limited in the effective area that can be revealed per unit time, while BIB provides lower removal rates, but has the advantage with respect to the size of the field of view produced. Microstructural features and the appearance of defects were identified and tracked for two model systems: Cu vias and Cu TSVs (through-silicon vias).