GaN-based radial heterostructure nanowires grown by MBE and ALD

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Lari, L.^1,2 ; Ross, I.M.^2 ; Walther, T.^2 ; Black, K.^3 ; Cheze, C.^4 ; Geelhaar, L.^4 ; Riechert, H.^4 ; Chalker, P.R.^3

Department of Physics, University of York, Heslington, YO10 5DD, York, United Kingdom^1

Kroto Centre for High-Resolution Imaging and Analysis, Dept. Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom^2

Department of Engineering, University of Liverpool, Liverpool, L69 3GH, United Kingdom^3

Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany^4

关键词: Focussed ion beams;    Photoluminescence and Raman spectroscopy;    Polycrystalline;    Radial heterostructure;    Scanning transmission electron microscopy;    State of the art;    Structural defect;    Whole lengths;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012039/pdf
DOI  :  10.1088/1742-6596/471/1/012039

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

A combination of molecular beam epitaxy (MBE) and atomic layer deposition (ALD) was adopted to fabricate GaN-based core/shell NW structures. ALD was used to deposit a HfO2shell of onto the MBE grown GaN NWs. Electron transparent samples were prepared by focussed ion beam methods and characterized using state-of-the-art analytical transmission and scanning transmission electron microscopy. The polycrystalline coating was found to be uniform along the whole length of the NWs. Photoluminescence and Raman spectroscopy analysis confirms that the HfO2ALD coating does not add any structural defect when deposited on the NWs.