Evidence of perfect dislocation glide in nanoindented 4H-SiC

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Texier, M.^1 ; De Luca, A.^1 ; Pichaud, B.^1 ; Jublot, M.^2 ; Tromas, C.^3 ; Demenet, J.-L.^3 ; Rabier, J.^3

Aix Marseille Université, CNRS, Faculté des Sciences et Techniques, av. Escadrille Normandie Niémen, F-13397 Marseille Cedex, France^1

CP2M, Aix-Marseille Univ, Campus de Saint-Jérôme, Av. Escadrille Normandie Niémen, F-13397 Marseille Cedex, France^2

Institut Pprime, UPR3346 CNRS-Université de Poitiers, Bât. SP2MI, Bd. Marie et Pierre Curie, Téléport 2, F-86962 Futuroscope-Chasseneuil du Poitou cedex, France^3

关键词: Basal planes;    Brittle regime;    Deformation microstructure;    Dislocation glide;    Extended defect;    Focussed ion beams;    Shockley partial dislocations;    Superficial layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012013/pdf
DOI  :  10.1088/1742-6596/471/1/012013

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Plastic deformation of a 4H-SiC wafer has been produced by nanoindentation at room temperature. The superficial layer of the specimen in the indented area has been lifted out thanks to a specific focussed ion beam micromachining method and the deformation microstructure close to the imprints has been investigated by means of both conventional and high-resolution transmission electron microscopy (TEM). The analysis of the images revealed the presence of various types of extended defects. Perfect dislocations and single stacking faults bounded by isolated Shockley partial dislocations have been observed on the basal plane. Perfect dislocations have also been evidenced out of the basal plane. These results highlight the competition between various activated systems involved during the plastic deformation of 4H-SiC in the brittle regime.