Origin of a-plane (Al,Ga)N formation on patterned c-plane AIN/sapphire templates

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Mogilatenko, A.^1,2 ; Kirmse, H.^2 ; Hagedorn, S.^1 ; Richter, E.^1 ; Zeimer, U.^1 ; Weyers, M.^1 ; Ränkle, G.T.^1

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany^1

Humboldt University of Berlin, Newtonstr. 15, 12489 Berlin, Germany^2

关键词: A-plane;    Growth stages;    Nlayers;    Nanobeam diffraction;    Vertical direction;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012038/pdf
DOI  :  10.1088/1742-6596/471/1/012038

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

A-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [11¯00]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [112¯0](Al,Ga)N || [0001]Al2O3at the ridge sidewalls. Faster growth of the top (112¯0)(Al,Ga)N facet in the vertical direction leads to the overgrowth of c-plane (Al,Ga)N nucleated on the horizontal ridge and trench surfaces. Phase separation into binary GaN and AlN takes place during the first growth stages. However, this fades out and does not influence the composition of the final thick a-plane (Al,Ga)N layer.