Composition variation of In1?xGaxAs epitaxially grown in narrow trenches on Si

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Favia, P.^1 ; Richard, O.^1 ; Geypen, J.^1 ; Waldron, N.^1 ; Merckling, C.^1 ; Guo, W.^1 ; Caymax, M.^1 ; Bender, H.^1

Imec, Kapeldreef 75, B-3001 Leuven, Belgium^1

关键词: Composition variation;    Energy dispersive spectroscopies (EDS);    Epitaxially grown;    Indium content;    Nanobeam diffraction;    Shallow trench isolation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012010/pdf
DOI  :  10.1088/1742-6596/471/1/012010

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this work we investigate the indium content in In1-xGaxAs narrow trenches on Si by transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and nano beam diffraction (NBD). We find a higher indium content in wider trenches and by scanning a trench from bottom to top we observe an increase of indium up to a maximum value close to the level of the surface of the shallow trench isolation oxide.