Simulation and comparision of GaAs, AlGaAs and GaInP barriers in InGaAs quantum well lasers

International Conference on Manufacturing Technology, Materials and Chemical Engineering

材料科学;化学工业

Huibo, Yuan^1 ; Li, Lin^1^2 ; Zeng, Lina^2 ; Zhang, Jing^1 ; Li, Zaijin^2 ; Qu, Yi^2 ; Ma, Xiaohui^1 ; Liu, Guojun^1

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin

130022, China^1

College of Physics and Electronic Engineering, Hainan Normal University, Haikou, Hainan

571158, China^2

关键词: Comparision;    High slope efficiency;    Indium content;    InGaAs quantum wells;    Low threshold current;    Material gain;    Threshold currents;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/592/1/012151/pdf
DOI  :  10.1088/1757-899X/592/1/012151

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

InGaAs quantum wells with GaAs, AlGaAs and GaInP barriers have been simulated, respectively. The InGaAs/GaInP structure reveals a high material gain which could be nearly 1.4 times of that of InGaAs/GaAs. Threshold current of InGaAs/GaInP structure is less than half of InGaAs/AlGaAs. A high slope efficiency of 1.57 W/A from InGaAs/GaInP structure is observed with indium content as high as 0.35. InGaAs/GaInP structure will be the most appropriate candidate to fabricate a laser diode with high slope efficiency and low threshold current.