ZnO layers deposited by Atomic Layer Deposition

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Pécz, B.^1,2 ; Baji, Zs.^1 ; Lábadi, Z.^1 ; Kovács, A.^3

Institute for Technical Physics and Matl. Sci., Research Centre for Natural Sciences, Hungarian Academy of Sciences, Konkoly-Thege u. 29-33, 1121 Budapest, Hungary^1

Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, Egyetem u.10, Veszprém, H-8200, Hungary^2

Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grünberg Institute, Forschungszentrum Jülich, D-52425, Germany^3

关键词: GaN substrate;    High quality;    Low deposition temperature;    Polycrystalline;    Single-crystalline;    Thick epitaxial;    ZnO layers;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012015/pdf
DOI  :  10.1088/1742-6596/471/1/012015

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The structure of 40 nm thick epitaxial ZnO layers grown on single crystalline sapphire and GaN substrates by atomic layer deposition has been studied using transmission electron microscopy. The growth is carried out between 150°C and 300°C without any buffer layer using di-ethyl zinc and water precursors. The ZnO layer on sapphire is found to be polycrystalline, which is probably due to the large misfit (∼15 %) and the relatively low deposition temperature. However, the small misfit (∼1.8 %) between the ZnO layer that is deposited on GaN at 300°C resulted in a high quality single crystalline layer.