Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Beltrán, A.M.^1,5 ; Ben, T.^1 ; Sánchez, A.M.^2 ; Gass, M.H.^3 ; Taboada, A.G.^4 ; Ripalda, J.M.^4 ; Molina, S.I.^1

Departamento de Ciencia de Los Materiales e I.M. y Q.I., Facultad de Ciencias, Campus Río San Pedro, S/n, 11510 Puerto Real, Cádiz, Spain^1

Physics Department, University of Warwick, Coventry CV4 7AL, United Kingdom^2

UK SuperSTEM, Daresbury Laboratory, Daresbury WA4 4AD, United Kingdom^3

Instituto de Microelectrónica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain^4

Center for Nanoanalysis and Electron Microscopy (CENEM), Department Werkstoffwissenschaften, Universität Erlangen-Nürnberg, Cauerstrasse 6, 91058, Erlangen, Germany^5

关键词: Bulk plasmons;    Compositional analysis;    Compositional information;    Core loss;    Energy ranges;    Low loss EELS;    Low-loss;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012012/pdf
DOI  :  10.1088/1742-6596/471/1/012012

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAs-GaSb system, since in this energy range the edges corresponding to these elements are better defined than in Core-Loss. Furthermore, the analysis of the bulk plasmon peak, which is present in this energy range, also provides information about the composition. In this work, compositional information in an InAs-GaAs-GaSb heterostructure has been obtained from Low-Loss EEL spectra.