Magnetotransport in graphene on silicon side of SiC

20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics

Vaek, P.^1 ; Smrka, L.^1 ; Svoboda, P.^1 ; Ledínský, M.^1 ; Jurka, V.^1 ; Orlita, M.^2,3 ; Maude, D.K.^3 ; Strupinski, W.^4 ; Stepniewski, R.^5 ; Yakimova, R.^6

Institute of Physics ASCR, V.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic^1

Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Praha 2, Czech Republic^2

Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, avenue des Martyrs, 25, 38042 Grenoble, France^3

Institute of Electronic Materials Technology, Wolczynska 133, Warszawa, 01-919, Poland^4

Institute of Experimental Physics, Warsaw University, Hoza 69 00-681 Warszawa, Poland^5

Linköping University of Technology, S-581 83 Linköping, Sweden^6

关键词: Conducting channels;    Field dependence;    Hall resistance;    Magneto-oscillation;    Model calculations;    Quantitative agreement;    Resistive magnets;    Sample preparation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/456/1/012038/pdf
DOI  :  10.1088/1742-6596/456/1/012038

来源: IOP

【 摘 要 】

We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.