Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry

20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics

Bockhorn, L.^1 ; Hodaei, A.^1 ; Schuh, D.^2 ; Wegscheider, W.^3 ; Haug, R.J.^1

Institut für Festkörperphysik, Leibniz Universität Hannover, D-30167 Hannover, Germany^1

Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93053 Regensburg, Germany^2

Laboratory for Solid State Physics, ETH Zürich, CH-8093 Zürich, Switzerland^3

关键词: Different geometry;    Hall resistance;    Negative magneto-resistance;    Sample geometry;    Shubnikov de-Haas oscillation;    Two-dimensional electron gas (2DEG);    Two-dimensional electron system;    Zero magnetic fields;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/456/1/012003/pdf
DOI  :  10.1088/1742-6596/456/1/012003

来源: IOP

【 摘 要 】

In a high mobility two-dimensional electron gas (2DEG) realized in a GaAs / Al0.3Ga0.7As quantum well we observe changes in the Shubnikov-de Haas oscillations (SdHO) and in the Hall resistance for different sample geometries. We observe for each sample geometry a strong negative magnetoresistance around zero magnetic field which consists of a peak around zero magnetic field and of a huge magnetoresistance at larger fields. The peak around zero magnetic field is left unchanged for different geometries.