Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals

International Conference on Dynamics of Systems on the Nanoscale 2012

Sushko, G.B.^1 ; Korol, A.V.^1,2 ; Greiner, Walter^1 ; Solov'yov, A.V.^2,3

Frankfurt Institute for Advanced Studies, Ruth-Moufang-Str. 1, 60438 Frankfurt am Main, Germany^1

St. Petersburg State Maritime University, Leninsky ave. 101, 198262 St. Petersburg, Russia^2

A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia^3

关键词: Crystallographic plane;    Emission spectrums;    Positron channelings;    Projectile energy;    Si (1 1 1);    Si(110);    Silicon crystal;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/438/1/012018/pdf
DOI  :  10.1088/1742-6596/438/1/012018

来源: IOP

【 摘 要 】

Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195-855 MeV.