Simulations of electron channeling in bent silicon crystal

International Conference on Dynamics of Systems on the Nanoscale 2012

Sushko, G.B.^1 ; Bezchastnov, V.G.^1,3,4 ; Korol, A.V.^1,2 ; Greiner, Walter^1 ; Solov'yov, A.V.^1,5 ; Polozkov, R.G.^3 ; Ivanov, V.K.^3

Frankfurt Institute for Advanced Studies, Ruth-Moufang-Str. 1, 60438 Frankfurt am Main, Germany^1

St. Petersburg State Maritime University, Leninsky ave. 101, 198262 St. Petersburg, Russia^2

St. Petersburg State Polytechnic University, Politekhnicheskaya str. 29, 195251 St. Petersburg, Russia^3

Department of Theoretical Astrophysics, Ioffe Physical-Technical Institute, Politechnicheskaya Str. 26, 194021 St. Petersburg, Russia^4

A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia^5

关键词: Classical trajectories;    Crystallographic plane;    Electron channeling;    Monte Carlo approach;    Projectile energy;    Theoretical simulation;    Thermal vibration;    Ultra relativistic electrons;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/438/1/012019/pdf
DOI  :  10.1088/1742-6596/438/1/012019

来源: IOP

【 摘 要 】

We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package [2,3], which simulates classical trajectories of in a crystalline medium by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. A Monte Carlo approach is employed to sample the incoming electrons and to account for thermal vibrations of the crystal atoms. The electron channeling along Si(110) crystallographic planes are studied for the projectile energies 195-855 MeV and different curvatures of the bent crystal.