Channeling and Radiation of Electrons in Silicon Single Crystals and Si1?xGex Crystalline Undulators

International Conference on Dynamics of Systems on the Nanoscale 2012

Backe, H.^1 ; Krambrich, D.^1 ; Lauth, W.^1 ; Andersen, K.K.^2 ; Hansen, J. Lundsgaard^2 ; Uggerhøj, Ulrik I.^2

Johannes Gutenberg-University Mainz, Institute for Nuclear Physics, D-55099 Mainz, Germany^1

University of Aarhus, Department of Physics and Astronomy, DK-8000 Aarhus C, Denmark^2

关键词: Channeling radiation;    Electron beam energy;    Epitaxially grown;    Length measurement;    Model calculations;    Radiation emissions;    Radiation spectra;    Silicon single crystals;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/438/1/012017/pdf
DOI  :  10.1088/1742-6596/438/1/012017

来源: IOP

【 摘 要 】

The phenomenon of channeling and the basic features of channeling radiation emission are introduced in a pedestrian way. Both, radiation spectra as well as dechanneling length measurements at electron beam energies between 195 and 855 MeV feature quantum state phenomena for the (110) planar potential of the silicon single crystals. Radiation from a crystalline undulator, produced at the Aarhus University (UAAR), has been investigated at the Mainz Microtron electron accelerator facility MAMI. The 4-period epitaxially grown strained layer Si1-xGexundulator had a period length λu= 9.9 μm. At a beam energy of 375 MeV a broad excess yield around the theoretically expected photon energy of 0.132 MeV has been observed. Model calculations on the basis of synchrotron-like radiation emission suggest that evidence for a weak undulator effect has been observed.