Synthesis and Physicochemical Properties of SiO2 _ Ta2O5 Thin-Film Systems and Powders

All-Russian research-to-practice conference "Ecology and safety in the technosphere"

生态环境科学

Malchik, A.G.^1 ; Litovkin, S.V.^1 ; Rodionov, P.V.^1 ; Kryuchkova, S.O.^1

Yurga Institute of Technology (Branch), National Research Tomsk Polytechnic University, 26, Leningradskaya st., Yurga

652055, Russia^1

关键词: Film forming solution;    Physicochemical property;    Ta2O5 thin films;   

Others  :  https://iopscience.iop.org/article/10.1088/1755-1315/115/1/012004/pdf
DOI  :  10.1088/1755-1315/115/1/012004

学科分类：环境科学（综合）

来源: IOP

【 摘 要 】

Within the research, SiO2- Ta2O5films from film-forming solutions based on tetraethoxysilane and tantalum chloride (V) are synthesized. Physicochemical patterns and specifics of producing the films are determined by means of IR spectroscopy and thermogravimetric analysis. The processes of SiO2- Ta2O5films formation are studied. Interrelation between SiO2- Ta2O5composition, concentration of incoming components and their physicochemical properties are revealed.