Study on Graphene Oxide (GO) Supernatant Dilution to the Optical and Electrical Properties of TCF Based-reduced Graphene Oxide (RGO) Films

Seminar Nasional Material 2018

Rahmawati, Dina^1 ; Aimon, Akfiny Hasdi^1 ; Iskandar, Ferry^1^2 ; Wibowo, Arie^2^3 ; Khairurrijal, Khairurrijal^4

Energy and Environmental Laboratory, Departement of Physics, Institut Teknologi Bandung, Jl. Ganesa 10, Bandung

40132, Indonesia^1

Research Center for Nanosciences and Nanotechnology (RCNN), Institut Teknologi Bandung, Jl. Ganesa 10, Bandung

40132, Indonesia^2

Material Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, Indonesia^3

Research Center for Biosciences and Biotechnology, Institute for Research and Community Services, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung

40132, Indonesia^4

关键词: Fluorine tin oxides;    High conductivity;    Optical and electrical properties;    Potential materials;    Reduced graphene oxides (RGO);    Reduction process;    Transparent conductive films;    UV-vis spectroscopy;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/599/1/012003/pdf
DOI  :  10.1088/1757-899X/599/1/012003

来源: IOP

【 摘 要 】

Graphene is a potential material to replace indium tin oxide (ITO) and fluorine tin oxide (FTO) as a transparent conductive films (TCF) due to its high conductivity and transparency. In this study, fabrication of graphene-based TCF was carried out by means of the drop-casting method, with graphite oxide as the raw material. The graphene oxide (GO) was diluted by adding 1, 3, 5, and 7 ml of distilled (DI) water. The sample was also heat treated to ensure complete reduction process. The deposited films were characterized using UV-Vis spectroscopy and I-V to investigate their optical and electrical properties. Based on the measurement results, sample with 3 ml DI water addition gives transparency and sheet resistance (Rs) of 41.01 % and 9.43 kΩ/sq, respectively. This material has a great potential to be applied as the optoelectronics material.