Induced Synthesis of Vertically Oriented Multilayer MoS2 via CVD Method

2019 International Conference on Advanced Electronic Materials, Computers and Materials Engineering

无线电电子学;计算机科学;材料科学

Liu, Shuang^1^2 ; Nie, Changbin^1

Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China^1

University of Chinese Academy of Sciences, Beijing, China^2

关键词: Chemical vapor depositions (CVD);    CVD method;    Growth mechanisms;    Nano-structured;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/563/2/022002/pdf
DOI  :  10.1088/1757-899X/563/2/022002

来源: IOP

【 摘 要 】

Fabrication of nanostructured MoS2 for photodetector applications has become increasingly attractive due to its atomically thin profile and favorable bandgap. In this paper, vertically oriented multilayer MoS2 (V-MoS2) are grown directly on a SiO2 substrate by chemical vapor deposition (CVD) with TiO2 being adopted as an induced precursor for the first time. The interim morphologies of the synthesized MoS2 are investigated and the growth mechanism of the MoS2 film is proposed.