Scaling analyses on the critical current density in MgB2/SiC/Si thin film processed at higher temperature

27th International Cryogenics Engineering Conference and International Cryogenic Materials Conference 2018

Nishida, Akihiko^1 ; Taka, Chihiro^1 ; Chromik, Stefan^2

Department of Applied Physics, Fukuoka University, 8-19-1 Nanakuma, Jonan-ku, Fukuoka

814-0180, Japan^1

Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, Bratislava

841 04, Slovakia^2

关键词: Critical current density Jc;    Critical fields;    Film surfaces;    Lower temperatures;    Orders of magnitude;    Scaling analysis;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/502/1/012184/pdf
DOI  :  10.1088/1757-899X/502/1/012184

来源: IOP

【 摘 要 】

Scaling analyses are performed on the critical current density J c in MgB2/SiC/Si thin film processed at higher temperature, in comparison with similar films processed at lower temperature. Experimental J c data under magnetic field perpendicular to the film surface are reduced against transition temperature and critical field, and then analyzed with the comprehensive scaling formula, which turns out to fit experimental data remarkably well over 15 orders of magnitude.