High energy electron-beam irradiation effects in Si-SiOx structures

INERA Conference 2015: Light in Nanoscience and Nanotechnology

Nesheva, D.^1 ; Dzhurkov, V.^1 ; Šepanovi, M.^2 ; Bineva, I.^1 ; Manolov, E.^1 ; Kaschieva, S.^1 ; Nedev, N.^3 ; Dmitriev, S.N.^4 ; Popovi, Z.V.^2

Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, Sofia

1784, Bulgaria^1

Center for Solid State Physics and New Materials, Institute of Physics, University of Belgrade, Pregrevica 118, Belgrade

11080, Serbia^2

Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. s/n, Mexicali

C. P.21280, B. C., Mexico^3

Joint Institute for Nuclear Research, Flerov Laboratory of Nuclear Reactions Dubna, Moskow region

141980, Russia^4

关键词: Amorphous Si;    Electrically active defects;    Film surfaces;    Fluences;    High energy electron beam irradiation;    MeV-Electrons;    Oxide matrix;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/682/1/012012/pdf
DOI  :  10.1088/1742-6596/682/1/012012

来源: IOP

【 摘 要 】

Homogeneous SiOx films (x=1.3, 200 nm and 1000 nm thick) and composite a-Si-SiOy films (y ∼ 1.80) containing amorphous Si nanoparticles have been prepared on crystalline (c-Si) substrate. A part of the films was irradiated at temperature below 50°C by 20 MeV electrons with two different fluences (7.2x1014and 1.44x1015el.cm-2). Atomic force microscopy (AFM), Raman spectroscopy and capacitance (conductance) - voltage (C(G)-V) measurements on Al/c-Si/SiOx/Al or Al/c-Si/(a-Si-SiOy)/Al structures were used to get information about the irradiation induced changes in the surface morphology, the phase composition in the film bulk and at the Si-SiOxinterface. The AFM results show that the electron irradiation decreases the film surface roughness of the films annealed at 250°C. The Raman scattering data imply appearance of amorphous silicon phase and some structural changes in the oxide matrix of the homogeneous SiOxfilms. In the composite films electron beam stimulated decrease of the defects at the a-Si/SiOy interface has been assumed. The initial C(G)-V results speak about electron induced formation of electrically active defects in the SiOy matrix of the composite films.