Effect of the active mode NMOS-transistor irradiated on formation of surface defects

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Petukhov, K.A.^1 ; Popov, V.D.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: Active mode;    Defects formation;    Dose rate;    NMOS transistors;    Passive mode;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012016/pdf
DOI  :  10.1088/1757-899X/498/1/012016

来源: IOP

【 摘 要 】

The results of experiment on irradiation CMOS integrated circuits are presented at dose rate 0,1 rad/s with in electric and passive modes. Two stages of surface defects formation in both cases were observed.