?On-line? neutron fluence registration by silicon bipolar transistor

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Butin, V.I.^1^2 ; Butin, I.V.^3 ; Butina, A.V.^1

Dukhov Research Institute of Automatics (VNIIA), Moscow, Russia^1

National Research Nuclear University MEPhI, Moscow, Russia^2

Bauman Moscow Technical University (BMSTU), Russia^3

关键词: Constructive solutions;    Damage effects;    Gain factors;    Neutron fluences;    Practical method;    Radiation tests;    Reference source;    Silicon bipolar transistors;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012006/pdf
DOI  :  10.1088/1757-899X/498/1/012006

来源: IOP

【 摘 要 】

An efficient practical method of bipolar transistor application for neutron fluence registration is presented. The method is focused on the neutron fluences damage effect correlation for various sources to reference source. The bipolar transistor connection diagram and an example of device realization based on STM32 microcontroller are described. STM32 is used for providing test signals and parameter registration used for gain factor calculation of the bipolar transistors monitor (BTM). The proposed approach allows to consider the features of BTM that is pre-irradiated at reference source and their application as the neutron fluence monitors. These connection diagram and constructive solutions provide "on-line" neutron fluence registration for different sources in terms of the reference source as required for the verification of radiation test results.