Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System

15th International Conference on Strangeness in Quark Matter

Momot, I.^1,2 ; Singla, M.^3 ; Teklishyn, M.^2,3 ; Pugatch, V.^2 ; Heuser, J.^3

Goethe University Frankfurt, Frankfurt am Main, Germany^1

Kiev Institute for Nuclear Research (KINR), Kiev, Ukraine^2

GSI Helmholtzzentrum Fr Schwerionenforschung GmbH, Darmstadt, Germany^3

关键词: Double sided;    Exposed to;    Neutron fluences;    Prototype detector;    Radiation field;    Radiation tolerances;    Silicon micro-strip;    Tracking system;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/668/1/012117/pdf
DOI  :  10.1088/1742-6596/668/1/012117

来源: IOP

【 摘 要 】

Double-sided silicon microstrip sensors will be used in the Silicon Tracking System of the CBM experiment. During experimental run they will be exposed to a radiation field of up to 1x10141 MeV neqcm-2. Radiation tolerance studies were made on prototypes from two different vendors. Results from these prototype detectors before and after irradiation to twice that neutron fluence are discussed.