Visibility of single layer MoS2 for different dielectric layers on Si substrate

3rd International Conference on New Material and Chemical Industry

材料科学;化学工业

Yang, H.^1 ; Zhang, J.K.^1 ; Li, C.^1 ; Zhao, D.^1 ; Wu, D.P.^1

State Key Laboratory of ASIC and System, Fudan University, Shanghai

200433, China^1

关键词: Analytical calculation;    Dielectric layer;    Dielectric thickness;    Hafnium dioxide;    Light wavelengths;    Molybdenum disulphide;    Research and development;    Transition metal dichalcogenides;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/479/1/012037/pdf
DOI  :  10.1088/1757-899X/479/1/012037

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Molybdenum disulphide (MoS2), the most widely studied two-dimensional transition metal dichalcogenides, has been investigated for many applications such as transistors, sensors and batteries. Understanding the visibility of single layer MoS2 is of great importance to the research and development of the MoS2-based devices. In this work, we thoroughly investigated the visibility of single layer MoS2 for different dielectric layers (including hafnium dioxide, aluminum oxide and silicon oxide) on Si substrate using analytical calculations based on a Fresnel-law-based model. The analysis results provide not only guidance for selecting the right dielectric thickness, but also basis for choosing the appropriate light wavelength at a specific dielectric thickness.