Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2016;8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics: Mokerov Readings 2017

Zebrev, G.I.^1 ; Shostachenko, S.A.^1

National Research Nuclear University MEPHI, Moscow, Russia^1

关键词: Analytical relations;    Chemical impurities;    Device characteristics;    Dielectric interface;    Field-effect devices;    Interfacial oxides;    On conductivities;    Unintentional doping;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/475/1/012013/pdf
DOI  :  10.1088/1757-899X/475/1/012013

来源: IOP

【 摘 要 】

Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.