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1 Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors [期刊论文]

来源：Electronics , 2020

作者:Xue Zhang;Jaehoon Park;Jihwan Park;等

关键词:In-Ga-Zn-O;thin-film transistors;...

使用许可:Unknown

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2 Characteristics of electrical field flow fractionation with chronoamperometry and electrochemical impedance [期刊论文]

来源：Micro & nano letters , 2020

作者:Ligeng Shao;Kevin Petersen;Farhad Shiri;等

关键词:equivalent circuits;fractionation;...

使用许可:CC BY

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3 Design and analysis of novel tri-active layer channel amorphous-IGZO thin-film transistor [期刊论文]

来源：Micro & nano letters , 2019

作者:Shashi K. Dargar, Viranjay M. Srivastava

关键词:II-VI semiconductors;amorphous semiconductors;...

使用许可:CC BY

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4 Modified Schottky Barrier CNTFET with lightly doped drain [期刊论文]

来源：Micro & nano letters , 2018

作者:Amin Ghasemi Nejad Raeini, Zoheir Kordrostami

关键词:carbon nanotubes;carbon nanotube field effect transistors;...

使用许可:CC BY

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5 Sol–gel synthesis of Ba-doped ZnO nanoparticles and its use in varistor ceramics [期刊论文]

来源：Micro & nano letters , 2018

作者:Rong Yang, Xiao Qu, Mao-Hua Wang

关键词:barium;zinc compounds;...

使用许可:CC BY

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6 Suppression of ambipolar conduction and investigation of RF performance characteristics of gate-drain underlap SiGe Schottky barrier field effect transistor [期刊论文]

来源：Micro & nano letters , 2018

作者:Prashanth Kumar, Brinda Bhowmick

关键词:Ge-Si alloys;Schottky gate field effect transistors;...

使用许可:CC BY

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