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1 Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN:Si layers [会议论文]

作者:Osinnykh, I.V.^1,3;Malin, T.V.^1;Plyusnin, V.F.^2,3;等

关键词:Defect-related bands;Donor acceptors;...

会议举办机构:Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Lavrentieva av. 13, Novosibirsk

会议时间:2017

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2 Nature of intensive defect-related broadband luminescence of heavily doped Al x Ga1-x N:Si layers [会议论文]

作者:Osinnykh, I.V.^1,3;Malin, T.V.^1;Plyusnin, V.F.^2,3;等

关键词:Broadband luminescence;Defect-related bands;...

会议举办机构:Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 13 Lavrentieva av., Novosibirsk

会议时间:2017

预览  |  原文链接  |  全文  [ 浏览：9 下载：0  ]