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× Runaway electrons
作者:Tarasenko, V.F.^1, Burachenko, A.G.^1, Kh Baksht, E.^1
关键词:Amplitude-time characteristics;High pressure nitrogen;...
会议举办机构:Institute of High Current Electronics, Russian Academy of Sciences, 2/3 Akademichesky Ave., Tomsk
会议时间:2017
作者:Shulepov, M.A.^1;Erofeev, M.V.^1;Ripenko, V.S.^1;等
关键词:Runaway electrons;Surface free energy;...
会议举办机构:Institute of High Current Electronics SB RAS, Tomsk, Russia^1
会议时间:2017
作者:Tarasenko, V.F.^1,2;Erofeev, M.V.^1,2;Shulepov, M.A.^1;等
关键词:Adhesion properties;Auger spectrum;...
会议举办机构:Institute of High Current Electrons, 2/3 Akademichesky ave., Tomsk
会议时间:2017
作者:Stahl, A.^1;Embréus, O.^1;Landreman, M.^2;等
关键词:Electron population;Feedback mechanisms;...
会议举办机构:Department of Physics, Chalmers University of Technology, Göteborg, Sweden^1
会议时间:2016
作者:Lomaev, M.^1,2, Sorokin, D.^1, Tarasenko, V.^1,2
关键词:Electric field strength;Molecular transitions;...
会议举办机构:Institute of High Current Electronics, Akademichesky Ave. 2/3, Tomsk
会议时间:2015
作者:Erofeev, M.V.^1,2;Shulepov, M.A.^1;Oskomov, K.V.^1;等
关键词:Comparative analysis;Microhardness measurement;...
会议举办机构:Institute of High Current Electrons, 2/3 Akademichesky ave., Tomsk
会议时间:2015