Confinement effect on semiconductor nanowires properties

Latent heat;Charge density;Surface states;Density of states;Dielectric function;Optical;Self-diffusion;Susceptibility

Nduwimana, Alexis ; Physics

University:Georgia Institute of Technology

Department:Physics

关键词: Latent heat;    Charge density;    Surface states;    Density of states;    Dielectric function;    Optical;    Self-diffusion;    Susceptibility;   

Others  :  https://smartech.gatech.edu/bitstream/1853/19865/1/nduwimana_alexis_200712_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Confinement effect on semiconductor nanowires properties.Alexis Nduwimana100 pagesDirected byDr. Mei-Yin ChouWe study the effect of confinement on various properties of semiconductornanowires. First, we study the size and direction dependence of the band gap ofgermanium nanowires.We use the density functional theory in the local density approximation.Results shows that theband gap decreases with the diameterThe susceptibility of these nanowires is also computed. Second, we look at the confinement effect on thepiezoelectric coefficients of ZnO and AlN nanowires.The Berry phase method is used. It is found that depending on passivation, thepiezoelectric effect can decrease or increase. Finally, we study the size and direction dependence of the melting temperature of silicon nanowires. We usethemolecular dynamics withthe Stillinger Weber potential. Results indicate that the melting temperature increases with the nanowire diameter and that it is direction dependent.