Study of stress measurement using polariscope

Stress optic coefficient;Silicon wafer;Stress separation;Photoelasticity

Li, Fang ; Mechanical Engineering

University:Georgia Institute of Technology

Department:Mechanical Engineering

关键词: Stress optic coefficient;    Silicon wafer;    Stress separation;    Photoelasticity;   

Others  :  https://smartech.gatech.edu/bitstream/1853/34762/1/li_fang_201008_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

The goal of this research was to investigate an experimental infrared transmission technique to extract the full stress components of the in-plane residual stresses in thin multi crystalline silicon wafer, and try to meet the need of photovoltaic industry to in situ measure residual stress for large cast wafers.