Scaling electronic devices has become paramount. The current work builds upon scaling efforts by developing novel synthesis methods and next generation sensing devices based on 2D materials. A new combination method utilizing thermal evaporation and chemical vapor deposition was developed and analyzed to show the possibilities of Transition Metal Dichalcogenide monolayers and heterostructures. The materials produced from the above process showed high degrees of compositional control in both spatial dimensions and chemical structure. Characterization shows controlled fabrication of heterostructures, which may pave the way for future band gap engineering possibilities. In addition, Phosphorene based field effect transistors, photodetectors, and gas sensors have been developed to show the versatility and potential of 2D based optoelectronic devices. As phosphorene has been found to be a potential candidate for real world field effect transistors, the interplay between device performance and environmentally conditions have been studied using in-situ transport measurements. Phosphorene was exposed to varying light and gaseous environments to understand how it preforms under different external stimuli. It was found that both light and gases can have extreme impacts on the properties of phosphorene.
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Synthesis, characterization, and electronic properties of novel 2D materials : transition metal dichalcogenides and phosphorene.