X-ray photoelectron spectroscopy (XPS) study of single crystal UO2 and U3O8 on r-plane sapphire and yttrium stabilized zirconium (YSZ) substrates

Uranium oxide;UO2;U3O8;yttrium stabilized zirconium (YSZ);R-plane Sapphire

Strehle, Melissa M. ; Heuser ; Brent J.

关键词: Uranium oxide;    UO2;    U3O8;    yttrium stabilized zirconium (YSZ);    R-plane Sapphire;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/24051/Strehle_Melissa.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

The purpose of the work performed in this thesis is to demonstrate the ability of a magnetron sputtering system to grow single crystal thin films of Uranium Oxides with and without specifically added Neodymium impurities.To do this we analyzed our thin films using X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Rutherford Backscattering Spectroscopy (RBS), and Secondary Ion Mass Spectroscopy (SIMS). This thesis will primarily focus on the growth of the thin films, and the analyzed results from X-ray Photoelectron Spectroscopy and X-ray Diffraction.The analysis of thin films of UO2 and U3O8 is a relatively new field with minimal data on thin films.There is however some work on bulk UO2 and U3O8.We will be able to compare our data to the data from bulk UO2 and U3O8 and predict the results from basic XPS and XRD theory.Observations to the thin films structural and electronic states will be made in comparison to bulk material.This will allow us to observe phenomenon such as oxidation, diffusion, and actinide incorporation within the film.Also, we will discuss the use of two different substrates and the quality of film that is produced during growth.Ultimately, this study will demonstrate the quality of our films and recommend the best substrate to be used in future film growth.