Monte Carlo simulation for high-frequency intrinsic noise analysis of MOSFET

Monte Carlo simulation;intrinsic noise;metal–oxide–semiconductor field-effect transistor (MOSFET)

Jo, Michael ; Ravaioli ; Umberto

关键词: Monte Carlo simulation;    intrinsic noise;    metal–oxide–semiconductor field-effect transistor (MOSFET);   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/45626/Michael_Jo.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This thesis introduces a Monte Carlo simulation of intrinsic electronic noise in MOSFETs. Brief reviews of the important aspects of carrier transport, band structure, and Monte Carlo technique are discussed. Based on full band 2D Monte Carlo simulation, a noise analysis platform is utilized. To this end, accurate calculation of instantaneous current is done by employing the Ramo-Shockley technique. Then, we extract Y-parameters that include the information about the noise in a device. From these Y-parameters, we calculate the parameters of the small signal equivalent circuit model and finally model our device into noise two-port model. A 30 nm double gate FinFET is chosen as a simulation model and the intrinsic noise of the device is examined. As a result, the double gate FinFET showed lower gate and source access resistance, and minimum noise figure, which contains important information about the intrinsic noise characteristic.