Metal-assisted chemical etching as a disruptive platform for multi-dimensional semiconductor sculpting

semiconductor;Metal-assisted Chemical Etching (MacEtch);magnetic field

Balasundaram, Karthik

关键词: semiconductor;    Metal-assisted Chemical Etching (MacEtch);    magnetic field;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/87969/BALASUNDARAM-DISSERTATION-2015.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Conventional top-down fabrication approaches for semiconductor manufacturing can be classified into dry (anisotropic) and wet etch (isotropic or orientation-dependent) processes. At present, fabrication of novel nanostructured morphologies like porous nanowires, nanopillars with tunable aspect ratios, spiral or helical-shaped array of pits, etc. is a major bottleneck to develop novel photonic or phononic device applications which can enable a much better understanding of their underlying physics, along with demonstrating functionalities that would otherwise be impossible. The work proposed in this dissertation involves the advancement of a recently discovered top-down fabrication approach called “Metal-assisted Chemical Etching (MacEtch)” which has the potential to overcome the current limitations of 1D and 3D semiconductor nanomanufacturing processes. The main focus is on the morphology, directionality, etch mechanisms and the influence of external electromagnetic fields to engrave novel structures in both silicon and III-V compound semiconductors. The outcome of this work can lead to advancement of knowledge in the areas of propagation of light and sound waves in a nanostructured dielectric material by demonstrating novel devices using our disruptive platform for manufacturing.