学位论文详细信息
Leveraging free carriers effects for infrared photonic structures and devices
Enhanced optical transmission gratings;Epsilon-near-zero;Highly doped semiconudctor;Mid-infrared plasmonic waveguide;Radio frequency photonics;Photoconductivity
Liu, Runyu
关键词: Enhanced optical transmission gratings;    Epsilon-near-zero;    Highly doped semiconudctor;    Mid-infrared plasmonic waveguide;    Radio frequency photonics;    Photoconductivity;   
Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/95482/LIU-DISSERTATION-2016.pdf?sequence=1&isAllowed=y
美国|英语
来源: The Illinois Digital Environment for Access to Learning and Scholarship
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【 摘 要 】
In this work, three types of novel photonic devices/structures were developed. The first one is a metal grating structure that combines the characters of ‘moth-eye’ structure and an extraordinary optical transmission grating. Therefore it has the capability to provide a uniform electrical distribution while simultaneously reducing the optical reflection loss. It can be applied to the active optoelectronic devices which require both optical and electrical access.The second device is a slot waveguide made with a hybrid doped semi-conductor/metal architecture. Our waveguide takes advantage of the doped semiconductor, which has highly controllable optical response as a designer plasmonic material in the mid-infrared. The local wavelength of the mode that propagates in the waveguide can be expanded at a selected frequency. Therefore the waveguide can function as a photonic wire, which potentially enables the design and fabrication of an integrated metatronic circuit.The third device is a room-temperature photodetector based on a resonant RF circuit. It consists a microstrip busline and a split-ring resonator that is capacitively coupled to the busline; the RF circuit is built on a semiconductor substrate, with the great flexibility of changing the underlying material system by epitaxial growth. We experimentally investigated the responsivity of this type of detector and concluded that both the material and the geometry will have great impact on the detector response. This detector architecture offers the potential for multiplexing arrays of detectors on a single read-out line; it also can allow us to perform carrier dynamics characterization of semiconductor materials.
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