Since 2004, when monolayer graphene was first experimentally isolated, proof-of-concept graphene devices have added new functionality to engineering devices. As these devices become geared toward commercial applications, the development of high-throughput manufacturing methods that produce consistent properties become necessary. Defect engineering provides a promising method to tune the properties of graphene. Grain boundaries made of 5-7 dislocations are the most prominent defect in graphene and have been shown to be responsible for variability in properties. Therefore, we analyze how to change the structure of graphene through control of grain boundary motion. We analyze grain boundary motion--accomplished by moving individual dislocations--through both topological and energetic considerations. We use each method to show the equivalence of displacement shift complete lattice dislocations and grain boundary kinks. We show that all grain boundary kinks have dislocation character by verifying that graphene grain boundaries can be modeled by the displacement shift complete lattice. This allows us to think of altering the type and structure of graphene grain boundaries using the linear elastic theory of dislocations to nucleate and propagate grain boundary kinks.
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Topological descriptions of grain boundaries in graphene