Characterisation of Reactive Ion Etch Processes for Ternary III-V Semiconductors

Electrical engineering, Materials science

Bunting, Andrew Stuart

University:University of Glasgow

关键词: Electrical engineering, Materials science;   

Others  :  http://theses.gla.ac.uk/74590/1/10992210.pdf

来源: University of Glasgow

【 摘 要 】

The work presented within this thesis concerns the development and characterisation of reactive ion etch processes for the compound Ill-V semiconductors Al0.3Ga0.7As, In0.53Ga0.47 As and In0.52Al0.48As. Two different etch chemistries, one based on the mixture of methane and hydrogen and the other formed from halogenated gases were studied.